Silicon Carbide Broadband Power Amplifier | SSPA 1.0-2.5-20

Aethercomm Model Number SSPA 1.0-2.5-20 is a high power, silicon carbide (SiC) broadband RF amplifier that operates from 1.0 to 2.5 GHz. This PA is ideal for broadband military platforms as well as commercial applications because it is robust and offers high power over a multi-octave bandwidth. This RF power amplifier employs temperature compensation to keep the gain constant over the temperature extremes. The power response changes by a ±0.5dB typical over temperature. This broadband RF amplifier operates with a base plate temperature of 85C with no degradation in the MTBF for the SiC devices inside. It is packaged in a modular, robust housing that is approximately 2.5″ (W) by 6.4″ (L) by 1.0 (H)”. This silicon carbide RF power amplifier has a typical P1dB of 15 watts at room temperature. Saturated output power across the band is typically 15-20 watts. Noise figure at room temperature is 8.0dB typical. This amplifier offers a typical gain of 49 dB with a typical gain flatness of ± 1.0dB. Typical OIP3 is 52dBm. Input and Output VSWR is 2.0:1 maximum. Class A current is 4.0 amps typical employing a +28Vdc supply. This PA operates from a 28Vdc input voltage. Worst case harmonic values are -17 dBc in band at P1dB. This SSPA includes an external DC blanking command that enables and disables the module in 10uSec typical. Standard features include over/under voltage protection, reverse polarity protection and internal DC-DC converter. The output is fully protected from an open or short circuit presented to this port with no damage. Input/output RF connectors are SMA Female. DC and Command voltages are accessible via a DSUB connector. This broadband SiC RF power amplifier operates from -40C to +85 base plate.