High Power Super Broadband GaN SSPA | SSPA 0.020-6.000-70

Aethercomm introduces another industry first. Model Number SSPA 0.020-6.000-70 is a high power, super broadband, Gallium Nitride (GaN) RF amplifier that operates from 20 MHz to 6.0 GHz. This PA is ideal for broadband military platforms as well as commercial applications because it is robust and offers high power over an extremely large bandwidth with decent power added efficiency. This high-voltage RF amplifier operates with a base plate temperature of -30C to +70C. It is packaged in a modular housing that is approximately 5.0” (width) by 5.0” (long) by 2.0” (height). The weight of this unit is ~3.5 pounds maximum. This amplifier has a typical saturated output power of 70 watts at room temperature (review the data on page 2 for frequency vs power across the band). Noise figure at room temperature is 10 dB typical. The power flatness across the band is typically ± 3.0dB. Input and output VSWR is 2.0:1 typical. This PA operates from a +28 Vdc input voltage. Typical second and third harmonic values can be found on the next page of this data sheet.

This Aethercomm high power SSPA includes an external DC blanking command that enables and disables the module in 25.0 uSec maximum. Typical on/off timing values are 18uSec. A logic low or open circuit disables the amplifier. Logic high will enable the GaN amplifier. Standard features include over/under voltage protection and reverse polarity protection. The output is fully protected from an open or short circuit presented to this port with no damage. Input/output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector. Contact the factory with any questions you may have. Summary test data is found on sheet two of this data sheet at room temperature.