High Power Super Broadband SSPA | SSPA 0.020-1.000-350Data Sheet
Aethercomm Model Number SSPA 0.020-1.000- 350 is a multi-decade bandwidth, super broadband GaN high-power RF amplifier.
Aethercomm Model Number SSPA 0.020-1.000-350 is a high power, multi-decade bandwidth, GaN solid state power amplifier. It is packaged in an enclosure that is optimized for airborne or ground applications that require survival in high performance shock and vibration environments. Nominal linear output power is 100-200 watts but power levels at saturation of 300-400 watts are typical from 100-900 MHz. Depending on the application, output power can be backed off to achieve excellent EVM metrics. This GaN broadband SSPA can be employed in high performance systems where high power, excellent efficiency and high linearity are required across a large frequency spectrum. Typical power gain is 53 to 57 dB. A nominal 0 dBm input drive is required to achieve saturated output power. The composite power added efficiency with a CW input is between 40-50% at room temperature from 50-1000 MHz. Input and output VSWR is 2.0:1 maximum. This high power SSPA can be blanked on and off in 10uSec maximum. Standard features include reverse polarity protection, output short and open circuit protection, and over/under voltage protection. In band harmonics are -17 dBc typical. Noise figure is 10 dB maximum. This RF power amplifier module operates from -40°C to +75°C base plate temperature. The thermal management system calls for this assembly to be mounted to a heat sink for conduction cooling.
This high power SSPA is employed in high shock and vibration environments. It is designed and tested to withstand MIL-STD-810 shock and vibration requirements. The housing volume is approximately 6.3” (W) x 12.8” (L) x 1.8” (H) and weighs 10.0 lbs. maximum. DC and logic connections are accessible via a single 9W4 DSUB connector. The RF input connector is an SMA female. The RF output connector is a type TNC female. Typical transmit test data appears on page two of this data sheet at room temperature. For mounting and heat sink instructions, further test data or operation and logic and pin out requirements, please contact the factory. This GaN amplifier operates from a +50Vdc power supply.
- Operation from 20-1000 MHz
- Composite PAE of 40-50% from 50 to 1000 MHz
- GaN Technology
- Ground or Airborne Capable
- 300-400 Watts Saturated Output Power
- Linear Output power of 100-200 Watts for Higher Par Waveforms