Aethercomm Model Number SSPA 2.5-6.0-50 is a high power, broadband, Gallium Nitride (GaN) RF amplifier that operates from 2.5 to 6.0 GHz. This PA is ideal for broadband military platforms as well as commercial applications because it is robust and offers high power over a multi-octave bandwidth. This solid state power amplifier operates with a base plate temperature of 85C with no degradation in the MTBF for the GaN devices inside. It is packaged in a modular housing that is approximately 2.5(w)” by 6.4(l)” by 1.0(h)”. This GaN broadband RF power amplifier has a typical P3dB of 25-50 watts at room temperature. Noise figure at room temperature is 10.0 dB typical. This gallium broadband power amplifier offers a typical gain of 48 dB with a typical gain flatness of ± 2.5 dB. Input and Output VSWR is 2.0:1 maximum. Class AB quiescent current is ~2.5 amps typical employing a +28 Vdc supply. This GaN broadband RF power amplifier operates from a +28Vdc ± 2% input voltage.
This SSPA includes an external DC blanking command that enables and disables the module in 7500 nSec typical. A logic low or open circuit commands the PA On. A logic high commands this GaN RF power amplifier Off. Standard features include over/under voltage protection and reverse polarity protection. The output is fully protected from an open or short circuit presented to this port with no damage. Input/output RF connectors are SMA female. DC and command voltages are connected via a nine pin DSUB connector. Contact the factory for a configuration drawing. This GaN power amplifier operates from -40C to +85C base plate. Summary test data is found on sheet two of this data sheet.
- ECCN: ITAR
- Gallium Nitride Broadband Power Amplifier
- Operation from 2.5 GHz to 6.0 GHz min
- Small Signal Gain 48 dB typical
- 30-50 Watts P3dB at room temperature typ.