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GaN Broadband Power Amplifier Solid State RF Amplifier | SSPA 0.020-6.000-10

Data Sheet

Gallium Nitride Broadband RF Power Amplifier Operation from 20 MHz to 6.0 GHz min Small Signal Gain 50 dB typical 5-10 Watts PSat typical

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Product Specifications

Aethercomm Model Number SSPA 0.020-6.000-10 is a medium power, super broadband, Gallium Nitride (GaN) RF amplifier that operates from 20 MHz to 6.0 GHz. This PA is ideal for broadband military platforms as well as commercial applications because it is robust and offers high power over an extremely large bandwidth with decent power added efficiency. This GaN broadband RF power amplifier was designed for broad band communication system platforms and jamming. This solid state RF power amplifier operates with a base plate temperature of 85C. It is packaged in a modular housing that is approximately 2.5″” (width) by 6.4″” (long) by 1.00″” (height). This broadband RF power amplifier has a typical saturated output power of 5-10 watts at room temperature. Noise figure at room temperature is 10 dB typical. This GaN broadband RF power amplifier offers a typical gain of 50 dB with a typical gain flatness of ± 4 dB. The power and gain flatness across the band is extremely flat for the bandwidth. Input and output VSWR is 2.0:1 typical. Class AB quiescent current is ~1.17 amps typical employing a +28 Vdc supply. This PA operates from a +28 Vdc input voltage. Typical OIP3 levels are 37 to 43 dBm with two tones at 30dBm each tone with a 1MHz spacing.

This Aethercomm RF SSPA medium power signal amplifier includes an external DC blanking command that enables and disables the module in 20.0 uSec maximum. Typical on/off timing values are 10uSec. A logic low or open circuit disables the amplifier. A logic high will enable the amplifier. Standard features include over/under voltage protection and reverse polarity protection. The output is fully protected from an open or short circuit presented to this port with no damage. Input/output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector. Contact the factory with any questions you may have. This GaN broadband RF solid state power amplifier operates from -40C to +85C base plate temperature.

  • Gallium Nitride Broadband Power Amplifier
  • Operation from 20 MHz to 6.0 GHz min
  • Small Signal Gain 50 dB typical
  • 5-10 Watts PSat typical

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