Aethercomm Model Number SSPA 0.020-1.000-30-48V is a high power, broadband, Gallium Nitride GaN RF amplifier that operates from 20 MHz to 1000 MHz. The bandwidth of this amplifier can be extended to 1200 MHz+ with similar performance. This PA is ideal for broadband military platforms as well as commercial applications because it is robust and offers high power over a multi-octave bandwidth with excellent power added efficiency. This GAN power amplifier was designed for broad band jamming and communication systems platforms. This amplifier operates with a base plate temperature of 85C with no degradation in the MTBF for the GaN devices inside. It is packaged in a modular housing that is approximately 2.5″” (width) by 6.4″” (long) by 1.06″” (height). This GAN amplifier has a typical P3dB of 30-45 watts at room temperature. Noise figure at room temperature is 10.0 dB maximum. This amplifier offers a typical gain of 50 dB with a typical gain flatness of ± 2.0 dB. The power and gain flatness across the band is extremely flat for the bandwidth. Input VSWR is 2.0:1 maximum. Class AB quiescent current is ~0.942 amps typical employing a +48 Vdc supply. This PA operates from a +48 Vdc input voltage.
This SSPA includes an external DC blanking command that enables and disables the module in 20 uSec maximum. A logic low or open circuit enables the amplifier. A logic high will disable the amplifier. Standard features include over/under voltage protection and reverse polarity protection. The output is fully protected from an open or short circuit presented to this port with no damage. Input/output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector. Contact the factory with any questions you may have. This amplifier operates from -40C to +85C base plate.
- Gallium Nitride Broadband Power Amplifier
- Operation from 20 MHz to 1000 MHz min
- Small Signal Gain 50 dB typical
- 40 to 50+% Typical Power Added Efficiency
- 30-45 Watts P3dB typical