Aethercomm Model Number SSPA 0.020-1.000-100 is a high power, broadband, Gallium Nitride (GaN) RF amplifier that operates from 20 MHz to 1000 MHz. The bandwidth of this amplifier can be extended to 1200 MHz+ with similar performance. This GaN broadband RF power amplifier is ideal for broadband military platforms as well as commercial applications because it is robust and offers high power over a multi-octave bandwidth. The gallium nitride amplifiers are designed for broad band jamming and communication systems platforms. This amplifier operates with a base plate temperature of 85C with no degradation in the MTBF for the GaN devices inside. It is packaged in a modular housing that is approximately 3.4″” (width) by 6.4″” (long) by 1.0″” (height). This GaN amplifier has a typical P3dB of 100 watts at room temperature. Noise figure at room temperature is 10.0 dB typical. This GaN RF power amplifier offers a typical gain of 58 dB with a typical gain flatness of ± 2.0 dB. The power and gain flatness across the band is extremely flat for the bandwidth. Input VSWR is 2.0:1 maximum. Class AB quiescent current is ~2.0 amps typical employing a +28 Vdc supply. This PA operates from a +28 Vdc input voltage.
This SSPA includes an external DC blanking command that enables and disables the module in 12 to 15 uSec typical. Faster switching times are easily achievable. Standard features include over/under voltage protection and reverse polarity protection. The GaN broadband RF power amplifier’s output is fully protected from an open or short circuit presented to this port with no damage. Input/output RF connectors are SMA female. Other connector types can be configured for airborne applications. DC and command voltages are accessible via DC feed through capacitors.
- Gallium Nitride Broadband Power Amplifier
- Operation from 20 MHz to 1000 MHz min
- Small Signal Gain 58 dB typical
- 40 to 60% Typical Power Added Efficiency
- 100 Watts P3dB typical