 Aethercomm designs and manufactures high power, super broadband amplifiers employing Gallium Nitride (GaN) technology. Aethercomm GaN amplifiers are operated from +28Vdc or +50Vdc power supplies. The frequency range of these amplifiers is from 20MHz to 6.0 GHz in bands currently. Achievable power levels are up to 500+ watts. Aethercomm currently has numerous GaN designs covering multi-octave and decade bandwidths. Continue to check our website for new offerings or contact the factory to discuss with our sales department.
Gallium Nitride amplifiers offer considerably better performance than conventional GaAs, LDMOS and VDMOS solutions. GaN amplifiers have a maximum junction temperature of 225ºC and this translates into base plate amplifier temperatures of 85ºC with no degradation in MTBF for the active devices. GaN solutions offer better efficiency than other conventional amplifier technologies. Efficiency improvements over octave bandwidths typically average between 10-15% over GaAs, LDMOS and VDMOS. GaN amplifiers also offer better in-band harmonics at P1dB in multi-octave designs. Gallium Nitride amplifiers offer exceptional gain and power over extremely broadbands. GaN amplifiers are available today from Aethercomm. Standard features on all these amplifiers include over-voltage protection, reverse polarity protection, an internal DC-DC converter with filtering and regulation, output infinite impedance protection and high speed DC blanking. Optional features include over-temperature shut-down, forward and reflected power monitoring, linearization, internal gain control, receiver integration, TR module integration and any other option requested by our customers. For custom amplifiers or questions on these cutting edge units, please contact Aethercomm sales at 760-208-6002. |
