Aethercomm Model Number SSPA 0.020-0.100-125 is a high power, broadband, Gallium Nitride (GaN) RF amplifier that operates from 20 MHz to 100 MHz. This PA is ideal for broadband military platforms as well as commercial applications because it is robust and offers high power over a multi-octave bandwidth with excellent power added efficiency. This amplifier was designed for high efficiency applications. This amplifier operates with a base plate temperature of 85C with no degradation in the MTBF for the GaN devices inside. It is packaged in a modular housing that is approximately 2.5" (width) by 6.4" (long) by 1.06" (height). This amplifier has a typical P3dB of 125 watts at room temperature. Noise figure at room temperature is 10.0 dB maximum. This amplifier offers a typical gain of 50 dB with a typical gain flatness of ± 1.0 dB. The power and gain flatness across the band is extremely flat for the bandwidth. Input VSWR is 2.0:1 maximum. Class AB quiescent current is ~0.70 amps typical employing a +48 Vdc supply. This PA operates from a +48 Vdc, a +12Vdc and a -5.0 Vdc input voltages.

This SSPA includes an external DC blanking command that enables and disables the module in 15 uSec maximum. A logic low or open circuit enables the amplifier. A logic high will disable the amplifier. Standard features include over/under voltage protection and reverse polarity protection. The output is fully protected from an open or short circuit presented to this port with no damage. Input/output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector.